Title :
Test SRAMs for characterizing alpha particle tracks in CMOS/bulk memories
Author :
Buehler, M.G. ; Blaes, B.R. ; Soli, G.A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Describes a methodology for using alpha particles to provide an independent measure of the cross section of an upset sensitive region in test SRAMs (static random-access memories). In addition, the thickness of over-layers and the alpha-particle collection depth were determined. These parameters are necessary in order to make precise estimates of the upset rates of memories due to cosmic-ray strikes. Measurements were made on 1.6-μm n-well CMOS 4-kb test SRAMs irradiated with an Am-241 alpha-particle source
Keywords :
CMOS integrated circuits; SRAM chips; alpha-particle effects; integrated circuit testing; 1.6 micron; 4 kbit; 241Am; CMOS/bulk memories; SRAMs; alpha particle tracks; collection depth; cosmic-ray strikes; over-layers; upset sensitive region; Alpha particles; Circuit testing; Equations; Foundries; MOSFET circuits; Particle tracking; Random access memory; Satellites; Space vehicles; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161723
