Title :
A non-local hydrodynamic model for impact ionization in submicron silicon BJT´s
Author :
Scrobohaci, Paul ; Nam, Joonwoo ; Tang, Ting-wei
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
A 1-D transport model for the high-energy electrons contributing to impact ionization (II) is presented. Application of the hydrodynamic II model to submicron silicon BJTs allows one to accurately predict the impact ionization coefficient αii and the multiplication factor M - 1. Comparison of the calculated results with the Monte Carlo simulation data is also presented
Keywords :
bipolar transistors; 1D transport model; Monte Carlo simulation; Si; elemental semiconductor; high-energy electrons; hot electron effects; impact ionization; multiplication factor; nonlocal hydrodynamic model; submicron BJT; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617460
