• DocumentCode
    1621330
  • Title

    A non-local hydrodynamic model for impact ionization in submicron silicon BJT´s

  • Author

    Scrobohaci, Paul ; Nam, Joonwoo ; Tang, Ting-wei

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
  • fYear
    1993
  • Firstpage
    25
  • Lastpage
    27
  • Abstract
    A 1-D transport model for the high-energy electrons contributing to impact ionization (II) is presented. Application of the hydrodynamic II model to submicron silicon BJTs allows one to accurately predict the impact ionization coefficient αii and the multiplication factor M - 1. Comparison of the calculated results with the Monte Carlo simulation data is also presented
  • Keywords
    bipolar transistors; 1D transport model; Monte Carlo simulation; Si; elemental semiconductor; high-energy electrons; hot electron effects; impact ionization; multiplication factor; nonlocal hydrodynamic model; submicron BJT; Bipolar transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1993.617460
  • Filename
    617460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1621330