A plasma-induced bandgap renormalization model for accurate simulation of advanced bipolar transistors

The authors propose a model to describe plasma-induced bandgap narrowing in Si bipolar transistors. They present simulation results of an advanced Si bipolar transistor structure and compare these results with experimental data. The results show that inclusion of plasma-induced bandgap narrowing model provides a more accurate estimate of the current gain characteristics. It is also found that this effect becomes more important for simulation at low temperatures