Silicon chips for GSM base station receivers

Author

Boric-Lubecke, Olga ; Lin, Jenshan ; Gould, Penny

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

Volume

2

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

381

Abstract

This paper describes silicon RFICs designed for GSM900/DCS1800 base station receivers. GSM standard and radio requirements are reviewed, and circuits that meet those requirements are discussed. A low-phase noise VCO, a high linearity low noise amplifier, a high linearity mixer, and a low-residual phase noise buffer amplifier, all fully integrated in 0.25 μm BiCMOS technology, are presented. Performance of these circuits demonstrated that it is feasible to use low cost silicon technology for base station receiver radios

Keywords

BiCMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; UHF oscillators; buffer storage; cellular radio; phase noise; radio receivers; silicon; telecommunication standards; voltage-controlled oscillators; 0.25 micron; 1800 MHz; 900 MHz; BiCMOS technology; GSM standard; GSM900/DCS 1800 base station receivers; RFIC; Si; high linearity low noise amplifier; high linearity mixer; low cost silicon technology; low-phase noise VCO; low-residual phase noise buffer amplifier; radio requirements; silicon chips; Base stations; GSM; Integrated circuit technology; Linearity; Low-noise amplifiers; Phase noise; Radiofrequency integrated circuits; Receivers; Silicon; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-7228-X

Type

conf

DOI

10.1109/TELSKS.2001.955802

Filename

955802