Title :
X-ray exposure mask accuracy evaluation using electrical test structures
Author :
Kuroki, Y. ; Hasegawa, S. ; Honda, T. ; Iida, Y.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
An X-ray exposure mask was evaluated using electrical test structures. Linewidth was calculated from van der Pauw sheet resistivity and four-terminal bridge resistance. The four-terminal bridge gave a high resolution of 0.002μ for 0.6-μm patterns. It was confirmed that the electrical measurement has very high accuracy and reproducibility. A misalignment vector map was demonstrated by a pair o four-terminal bridges. The van der Pauw resistor was also applied for reducing batting error in electron-beam lithography
Keywords :
X-ray lithography; electric resistance measurement; electron beam lithography; masks; 0.6 micron; X-ray exposure mask; batting error; electrical measurement; electron-beam lithography; four-terminal bridge resistance; linewidth; misalignment vector map; reproducibility; test structures; van der Pauw sheet resistivity; Bridges; Electric variables measurement; Gold; Lithography; Microelectronics; Plasma measurements; Resistors; Resists; Substrates; Testing;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161725
