DocumentCode
1621810
Title
Investigation of the high-frequency performance of AlGaAs/GaAs HBTs down to 20 K
Author
Peters, D. ; Brockerhoff, W. ; Reuter, R. ; Meschede, H. ; Wiersch, A. ; Becker, B. ; Daumann, W. ; Seiler, U. ; Koenig, E. ; Tegude, F.J.
Author_Institution
Solid-State Electron. Dept., Duisburg Univ., Germany
fYear
1993
Firstpage
32
Lastpage
35
Abstract
The temperature dependence of N-p-n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) has been extensively investigated in terms of an equivalent circuit model extracted from S-parameter measurements. The measurements were performed using an on-wafer measurement setup in the frequency and temperature ranges from 45 MHz up to 50 GHz and from 300 K down to 20 K, respectively. Moreover, the temperature dependence of the emitter-base ideality factor was found to play a key role for device performance
Keywords
microwave bipolar transistors; 300 to 20 K; 45 MHz to 50 GHz; AlGaAs-GaAs; III-V semiconductor; N-p-n; RF performance; S-parameter; emitter-base ideality factor; equivalent circuit model; heterojunction bipolar transistors; high-frequency performance; self-aligned; temperature dependence; Microwave bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617462
Filename
617462
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