DocumentCode
1621821
Title
GaAs switched-current techniques for front-end analogue signal processing applications
Author
Toumazou, Chris ; Battersby, Nick ; Punwani, Mohit
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fYear
1992
Firstpage
44
Abstract
Ideas for the realization of switched current analog sampled data techniques in gallium arsenide (GaAs) MESFET technology are presented. Simulation results of a 1-GHz clock rate damped integrator and a biquadratic bandpass filter are given. Specific first generation memory cells discussed include the basic CMOS cell, the simple inverting GaAs MESFET cell, and the linear noninverting cell
Keywords
analogue processing circuits; band-pass filters; field effect integrated circuits; gallium arsenide; integrating circuits; GaAs MESFET technology; basic CMOS cell; biquadratic bandpass filter; clock rate; damped integrator; first generation memory cells; front-end analogue signal processing; inverting cell; linear noninverting cell; sampled data techniques; switched-current techniques; Band pass filters; CMOS technology; Clocks; Electron mobility; Gallium arsenide; MESFETs; Signal processing; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location
Washington, DC
Print_ISBN
0-7803-0510-8
Type
conf
DOI
10.1109/MWSCAS.1992.271338
Filename
271338
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