Study of the effect of in composition variation in the active region and barrier layers on the structure performance of 462 nm InGaN QW lasers

Author

Dragulinescu, Andrei

Author_Institution

Fac. of ETTI, Politeh. Univ. of Bucharest, Bucharest, Romania

fYear

2013

Firstpage

1

Lastpage

6

Abstract

We investigated the effect of In composition variation in the active region and barrier layers on the main performance parameters (threshold current density, slope efficiency, external differential quantum efficiency, radiative, Auger, Shockley-Read-Hall (SRH) and stimulated recombination and potential distribution in the structure) of InGaN quantum well (QW) lasers working at a wavelength in the blue spectrum of 462 nm, in order to estimate if the performance of such a device can be improved or not as a result of these composition variations.

Keywords

Auger effect; III-V semiconductors; current density; electron-hole recombination; gallium compounds; indium compounds; quantum well lasers; Auger recombination; InGaN; QW lasers; Shockley-Read-Hall recombination; active region; barrier layers; blue spectrum; external differential quantum efficiency; in composition variation; potential distribution; quantum well lasers; radiative recombination; slope efficiency; stimulated recombination; structure performance; threshold current density; wavelength 462 nm; Computer aided software engineering; Diode lasers; Gallium nitride; Radiative recombination; Semiconductor lasers; Threshold current; In composition variation; InGaN; active region; barrier layers; laser; quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on

Conference_Location

Pitesti

Print_ISBN

978-1-4673-4935-2

Type

conf

DOI

10.1109/ECAI.2013.6636165

Filename

6636165