Doping concentration variation in the barrier layers of a 462 nm In0.02Ga0.98N QW laser for structure performance improvement

Lasers with quantum wells, based on the InGaN material system, have been researched for more than a decade, taking advantage from their wide bandgap energy, high emission efficiency and possibility of working in various spectra (red, green, blue, ultraviolet). We investigated if, for a structure of a 462 nm (blue) In_0.02Ga_0.98N QW laser, the variation of doping concentration in the barrier layers of the structure may lead to obtaining a lower threshold current, a higher slope efficiency and external differential quantum efficiency.