DocumentCode
1622644
Title
MQW electroabsorption modulators for 40-Gbit/s TDM systems
Author
Ido, Tatemi ; Tanaka, Shigehisa ; Inoue, Hiroaki
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1997
Firstpage
140
Lastpage
141
Abstract
In conclusion, we have developed InGaAs-InAlAs MQW electroabsorption (EA) modulators with integrated waveguides. The modulator chip had a large modulation-bandwidth of 50 GHz and low driving voltage of <3 V. Its prototype module also showed a modulation-bandwidth of >40 GHz. This MQW-EA modulator with integrated waveguides has excellent potential for use in 40-Gbit/s TDM systems
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical waveguides; semiconductor quantum wells; 3 V; 40 Gbit/s; 50 GHz; Gbit/s TDM systems; InGaAs-InAlAs MQW electroabsorption modulators; MQW-EA modulator; integrated waveguides; large modulation-bandwidth; low driving voltage; modulation-bandwidth; modulator chip; Capacitance; Frequency response; Optical modulation; Optical saturation; Optical transmitters; Optical waveguides; Photodiodes; Quantum well devices; Time division multiplexing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication. OFC 97., Conference on
Conference_Location
Dallas, TX
Print_ISBN
1-55752-480-7
Type
conf
DOI
10.1109/OFC.1997.719762
Filename
719762
Link To Document