SEM techniques for characterization of GaN nanostructures and devices

The scanning electron microscope (SEM) techniques play a key role in the characterization of various inorganic and/or organic semiconducting materials, micro/nanostructures and devices. The power of the SEM methods is mainly in imaging, characterization and diagnostics of local near surface properties. Among a variety of the SEM methods, Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC) methods have been extensively used for characterization of generation/recombination phenomena and electrical properties of bulk semiconductors and semiconductor structures.