Title :
A fully integrated pulsewidth modulator for class-S system
Author :
Park, Bonghyuk ; Jung, Jaeho
Author_Institution :
Mobile RF Res. Team, ETRI, Daejeon, South Korea
Abstract :
Switch-mode power amplification of varying envelope signal has gained influence in the mobile communication system because of its high linearity and efficiency. A fully integrated pulsewidth modulator (PWM) has been presented in this paper for switch-mode power amplifier. The HBT BiCMOS design of pulsewidth modulator circuit is applied to the LTE (Long Term Evolution) frequency range, which converts digitally modulated 955 MHz RF signal with a clock rate of 2.4 GHz. The modulator has been designed in a 0.25-μm SiGe-BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Long Term Evolution; heterojunction bipolar transistors; power amplifiers; pulse width modulation; HBT BiCMOS design; Long Term Evolution; class-S system; fully integrated pulsewidth modulator; mobile communication system; pulsewidth modulator circuit; switch-mode power amplification; switch-mode power amplifier; Band pass filters; Power amplifiers; Pulse width modulation; Radio frequency; Signal generators; Switches; BiCMOS; Class-S; High efficiency; Pulsewidth Modulator;
Conference_Titel :
Advanced Communication Technology (ICACT), 2012 14th International Conference on
Conference_Location :
PyeongChang
Print_ISBN :
978-1-4673-0150-3
