Title :
Study of optical and electrical properties of sputtered indium oxide films
Author :
Predanocy, M. ; Fasaki, I. ; Wilke, M. ; Hotovy, I. ; Kosc, I. ; Spiess, L.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The indium oxide films were deposited by dc reactive magnetron sputtering from In target on unheated Si substrate with oxygen flow in the ranging from 40 to 80 sccm. The deposited films were annealed in a conventional tube at T=400°C for 1 hour in N2 atmosphere. Measured absorption coefficients of all indium oxide films were in the range the values of 2.6÷12.5×106 m-1. It was found that calculated values of the direct band gap and indirect band gap depend on oxygen content in the sputtering gas mixture. Electrical resistivity increased from 6.8×103 to 28.5×103 Ωcm with increasing oxygen flow 40 - 80 sccm. Finally, the correlation between optical properties and surface roughness of examined samples was identified.
Keywords :
absorption coefficients; annealing; electrical resistivity; gas mixtures; indium compounds; semiconductor thin films; sputter deposition; surface roughness; wide band gap semiconductors; In2O3; Si; absorption coefficients; annealing; dc reactive magnetron sputtering; direct band gap; electrical properties; electrical resistivity; indirect band gap; optical properties; oxygen flow; sputtered indium oxide films; sputtering gas mixture; surface roughness; temperature 400 degC; time 1 hour; Absorption; Annealing; Indium; Optical films; Photonic band gap; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5667003
