Title :
Development of advanced Gunn diodes and Schottky multipliers for high power THz sources
Author :
Amir, F. ; Mitchell, C. ; Missous, M.
Author_Institution :
M & N Group, Univ. of Manchester, Manchester, UK
Abstract :
An advanced step-graded Gunn diode (~ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed.
Keywords :
Gunn oscillators; III-V semiconductors; Schottky diodes; gallium arsenide; Gunn diodes; Gunn oscillators; Schottky multipliers; frequency 100 GHz; joint modelling-experimental approach; low series resistance Schottky diodes; nonalloyed contacts; nonlinear elements; submillimetre wavelengths; Anodes; Current measurement; Gallium arsenide; Integrated circuit modeling; Schottky diodes; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5667005
