Title :
Radiation effects on CMOS Image Sensors due to X-Rays
Author :
Tan, Jiaming ; Büttgen, Bernhard ; Theuwissen, Albert J P
Author_Institution :
Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
This work presents a study on X-Ray radiation induced degradation mechanism on both CMOS Image Sensors (CIS) with 4-Transistor (4T) pixels and its elementary test structures. The major degradation shows an increase of dark random noise and leakage current for both the sensor and the test structures. Moreover, the quantum efficiency of the pinned-photodiode (PPD) shows a post-irradiation variation at the short wavelength region. It is found that the Si-SiO2 interface trap generation and charge trapping in the shallow trench isolation oxide are the main failure mechanisms.
Keywords :
CMOS image sensors; X-ray effects; failure analysis; interface states; isolation technology; leakage currents; p-i-n photodiodes; random noise; semiconductor device noise; semiconductor device reliability; 4-transistor pixel; CIS; CMOS image sensor; X-Ray radiation induced degradation mechanism; charge trapping; dark random noise; failure analysis; interface trap generation; leakage current; pinned-photodiode; post-irradiation variation; quantum efficiency; radiation effect; shallow trench isolation oxide; test structure; Degradation; Leakage current; Logic gates; MOSFETs; Noise; Pixel;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5667007
