Radiation effects on CMOS Image Sensors due to X-Rays

Author

Tan, Jiaming ; Büttgen, Bernhard ; Theuwissen, Albert J P

Author_Institution

Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2010

Firstpage

279

Lastpage

282

Abstract

This work presents a study on X-Ray radiation induced degradation mechanism on both CMOS Image Sensors (CIS) with 4-Transistor (4T) pixels and its elementary test structures. The major degradation shows an increase of dark random noise and leakage current for both the sensor and the test structures. Moreover, the quantum efficiency of the pinned-photodiode (PPD) shows a post-irradiation variation at the short wavelength region. It is found that the Si-SiO₂ interface trap generation and charge trapping in the shallow trench isolation oxide are the main failure mechanisms.

Keywords

CMOS image sensors; X-ray effects; failure analysis; interface states; isolation technology; leakage currents; p-i-n photodiodes; random noise; semiconductor device noise; semiconductor device reliability; 4-transistor pixel; CIS; CMOS image sensor; X-Ray radiation induced degradation mechanism; charge trapping; dark random noise; failure analysis; interface trap generation; leakage current; pinned-photodiode; post-irradiation variation; quantum efficiency; radiation effect; shallow trench isolation oxide; test structure; Degradation; Leakage current; Logic gates; MOSFETs; Noise; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5667007

Filename

5667007