Title :
Application of a cluster tool for interface engineering of polysilicon emitters
Author :
Reuss, Robert H. ; Werkhoven, C. ; Granneman, E. ; Hendricks, M.
Author_Institution :
Motorola Semiconductor Products Sector, Phoenix, AZ, USA
Abstract :
A cluster tool technique featuring in situ vapor HF etch and controlled ultra-thin oxide growth prior to polysilicon deposition is evaluated for poly emitter device fabrication. Detailed parametric analysis shows that only base current is modified. Interface engineering enables current gain to be verified as a function of oxide thickness. Process control is improved compared to conventional processing
Keywords :
cluster tools; Si; advanced BiCMOS process; cluster tool technique; controlled ultrathin oxide growth; current gain; elemental semiconductor; in situ vapor HF etch; interface engineering; oxide thickness; parametric analysis; polysilicon emitters; process control; vacuum operated tool; Process control;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617468
