Title :
A 1-V, 1.3-mW mixer for MB-OFDM UWB receivers by 0.18-μm CMOS technology
Author :
Fashtali, Z.G. ; Maghsoodi, M. ; Atani, Reza Ebrahimi ; Mahdavi, Mehdi
Author_Institution :
Dept. of Electr. Eng., Univ. of Guilan, Rasht, Iran
Abstract :
This paper presents a low-voltage low-power down-conversion mixer for 0.5~11 GHz, MB-OFDM UWB applications. The mixer operation is simulated in TSMC 0.18-μm CMOS process. To decrease supply voltage and power consumption, the RF and LO stages are merged together into one stage, so that the RF and LO signals apply to the source and gate of the devices, respectively while the IF output signals is produced from the drain. The mixer features a maximum conversion gain of 7.8 dB in 5.8 GHz, a low dc power consumption of 1.3mW, a DSB noise figure of 16.4 dB, an IP1dB of -10 dBm and an input IP3 of 4dBm. The 3-dB RF bandwidth is from 0.5 to 11 GHz with an IF frequency of 100 MHz. The mixer draws 1.3 mA from a power supply of 1 V leading to a low-power operation.
Keywords :
CMOS integrated circuits; MMIC mixers; OFDM modulation; field effect MMIC; microwave receivers; ultra wideband technology; IF output signals; LO signals; LO stages; MB-OFDM UWB receivers; RF signals; RF stages; TSMC CMOS process; bandwidth 0.5 GHz to 11 GHz; current 1.3 mA; frequency 100 MHz; frequency 5.8 GHz; gain 7.8 dB; mixer operation; noise figure 16.4 dB; power 1.3 mW; power consumption; size 0.18 mum; supply voltage; voltage 1 V; CMOS integrated circuits; MOSFET; Mixers; Noise; Power demand; Radio frequency; CMOS; UWB; low-power; low-voltage; mixer;
Conference_Titel :
Telecommunications (IST), 2012 Sixth International Symposium on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-2072-6
DOI :
10.1109/ISTEL.2012.6483008