Impact of noise temperature constant and diffusion coefficient on the minimum noise figure and minimum noise temperature of InAlAs/InGaAs DGHEMT

Author

Bhattacharya, Mahua ; Gupta, Madhu ; Jogi, Jyotika ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

In this paper, the impact of noise temperature constant (δ) and diffusion coefficient (D) on the noise performance of InAlAs/InGaAs DG-HEMT is studied using charge control based model. The noise temperature constant (δ) is observed to have a significant effect on the minimum noise figure (NF_min) and minimum noise temperature (T_min) over the entire range of drain current whereas the effect of D on NF_min and T_min is observed to be prominent mainly at high values of drain current where the diffusion noise dominates.

Keywords

III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; InAlAs-InGaAs; InAlAs-InGaAs DG-HEMT; charge control based model; diffusion coefficient; double-gate HEMT; drain current; minimum noise figure; minimum noise temperature; noise temperature constant; HEMTs; Indium gallium arsenide; Logic gates; Noise; Noise figure; Temperature control; HEMT; InAlAs/InGaAs; diffusion coefficient; double-gate; noise figure; noise temperature constant;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2012 International Conference on

Conference_Location

Mumbai

Print_ISBN

978-1-4673-3135-7

Type

conf

DOI

10.1109/ICEmElec.2012.6636226

Filename

6636226