Title :
High-density metal-insulator-metal capacitors using Gd2O3-based dielectrics
Author :
Padmanabhan, Regina ; Bhat, Nagaraj ; Mohan, Swati
Author_Institution :
Dept. of Electr. Commun. Eng., Indian Inst. of Sci., Bangalore, India
Abstract :
Metal-insulator-metal (MIM) capacitors have been fabricated with single dielectric stack (Gd2O3) and bilayer dielectric stacks of Eu2O3 and Gd2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) for analog and DRAM applications. While Pt/Gd2O3/Pt capacitors provide the highest capacitance density (15 fF/μm2), Pt/Gd2O3/Eu2O3/Pt and Pt/Eu2O3/Gd2O3/Pt capacitors provide lower leakage current densities (1.2×10-5 A/cm2 and 2.7×10-5 A/cm2, respectively at -1 V) and lower quadratic voltage coefficient of capacitance (VCC) (331 ppm/V2 and 374 ppm/V2, respectively at 1 MHz). The barrier/trap heights and defect densities have been computed for the faricated devices. The improved performance of bilayer dielectric stacks (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) is attributed to lower defect densities and higher barrier/trap heights.
Keywords :
MIM devices; capacitance; capacitors; europium compounds; gadolinium compounds; leakage currents; platinum; DRAM applications; Gd2O3-based dielectrics; MIM capacitors; Pt-Gd2O3-Eu2O3-Pt; Pt-Gd2O3-Pt; analog applications; barrier/trap heights; bilayer dielectric stacks; capacitance density; defect densities; frequency 1 MHz; high-density metal-insulator-metal capacitors; leakage current densities; quadratic voltage coefficient of capacitance; single dielectric stack; voltage -1 V; Annealing; Capacitance-voltage characteristics; Random access memory; Silicon; Substrates; Eu2O3; Gd2O3; metal-insulator-metal (MIM); voltage coefficient of capacitance (VCC);
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636227
