An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge

Author

Karumuri, Naveen ; Sreenidhi, T. ; DasGupta, Nandita ; Dasgupta, Avirup

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

A closed form analytical expression for the 2DEG (channel charge) in AlGaN/GaN HEMT is presented. This includes the effect of transverse electric field on the piezoelectric bound charge due to electromechanical coupling. The present model explains the dependence of bound piezoelectric charge and channel 2DEG concentration on gate bias. Models with and without electromechanical coupling are compared and explained.

Keywords

III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; high electron mobility transistors; piezoelectricity; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; HEMT; analytical charge control model; electromechanical coupling; gate bias dependence; piezoelectric bound charge; polarization charge; transverse electric field; Aluminum gallium nitride; Equations; Gallium nitride; HEMTs; Logic gates; MODFETs; Mathematical model; AlGaN/GaN; HEMT; analytical model; charge control model; electromechanical coupling; gate bias dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2012 International Conference on

Conference_Location

Mumbai

Print_ISBN

978-1-4673-3135-7

Type

conf

DOI

10.1109/ICEmElec.2012.6636230

Filename

6636230