Title :
An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge
Author :
Karumuri, Naveen ; Sreenidhi, T. ; DasGupta, Nandita ; Dasgupta, Avirup
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
A closed form analytical expression for the 2DEG (channel charge) in AlGaN/GaN HEMT is presented. This includes the effect of transverse electric field on the piezoelectric bound charge due to electromechanical coupling. The present model explains the dependence of bound piezoelectric charge and channel 2DEG concentration on gate bias. Models with and without electromechanical coupling are compared and explained.
Keywords :
III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; high electron mobility transistors; piezoelectricity; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; HEMT; analytical charge control model; electromechanical coupling; gate bias dependence; piezoelectric bound charge; polarization charge; transverse electric field; Aluminum gallium nitride; Equations; Gallium nitride; HEMTs; Logic gates; MODFETs; Mathematical model; AlGaN/GaN; HEMT; analytical model; charge control model; electromechanical coupling; gate bias dependence;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636230
