0.5-μm bipolar technology using a new base formation method: SST1C

Author

Yamaguchi, Chikara ; Kobayashi, Yoshiji ; Miyake, Masayasu ; Ishii, Kiyoshi ; Ichino, H.

Author_Institution

NTT LST Lab., Atsugi-shi, Japan

fYear

1993

Firstpage

63

Lastpage

66

Abstract

New super self-aligned process technology has been developed using a new method of shallow base formation and a 0.5-μm self-aligned double polysilicon bipolar process. The method of base formation, which uses a diffusion source of this oxide implanted with BF₂ ions, can be easily used in combination with SST technology. Furthermore, the collector electrode is formed by trench-filled phosphorous-doped polysilicon, which reduces transistor area and collector resistance. Using this technology, a high cut-off frequency of 40.75 GHz at V_CE = 1 V, ECL gate delay time of 22.6 ps/G at 2.4 mA and 22.4-GHz static 8:1 diver have been obtained

Keywords

bipolar transistors; 0.5 micron; 1 V; 2.4 mA; 40.75 GHz; BF₂ ion implantation; DC characteristics; ECL gate delay time; RTA; SIMS; SST1C; Si; Si-SiO₂; SiO₂:BF₂; bipolar transistors; elemental semiconductor; high cut-off frequency; impurity profiles; planarised LOCOS; self-aligned double polysilicon bipolar process; shallow base formation; super self-aligned process technology; thin oxide formation; trench isolation; Bipolar transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-1316-X

Type

conf

DOI

10.1109/BIPOL.1993.617470

Filename

617470