Title :
0.5-μm bipolar technology using a new base formation method: SST1C
Author :
Yamaguchi, Chikara ; Kobayashi, Yoshiji ; Miyake, Masayasu ; Ishii, Kiyoshi ; Ichino, H.
Author_Institution :
NTT LST Lab., Atsugi-shi, Japan
Abstract :
New super self-aligned process technology has been developed using a new method of shallow base formation and a 0.5-μm self-aligned double polysilicon bipolar process. The method of base formation, which uses a diffusion source of this oxide implanted with BF2 ions, can be easily used in combination with SST technology. Furthermore, the collector electrode is formed by trench-filled phosphorous-doped polysilicon, which reduces transistor area and collector resistance. Using this technology, a high cut-off frequency of 40.75 GHz at VCE = 1 V, ECL gate delay time of 22.6 ps/G at 2.4 mA and 22.4-GHz static 8:1 diver have been obtained
Keywords :
bipolar transistors; 0.5 micron; 1 V; 2.4 mA; 40.75 GHz; BF2 ion implantation; DC characteristics; ECL gate delay time; RTA; SIMS; SST1C; Si; Si-SiO2; SiO2:BF2; bipolar transistors; elemental semiconductor; high cut-off frequency; impurity profiles; planarised LOCOS; self-aligned double polysilicon bipolar process; shallow base formation; super self-aligned process technology; thin oxide formation; trench isolation; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617470
