Title :
Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM
Author :
Lashkare, S. ; Karkare, P. ; Bafna, P. ; Deshmukh, S. ; Srinivasan, V.S.S. ; Lodha, Saurabh ; Ganguly, Utsav
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
Bipolar Resistance RAM (RRAM) requires the selector device to have a symmetric IV characteristic to perform selection operation for a |Vset| (~ |Vreset|) range of 1V-5V and beyond as well as high currents. Recently, we have experimentally demonstrated a epitaxial Si punch-through diode based selector with an n+/p/n+ doping structure. In this paper, we present the selector performance engineering i.e. on-current density (Jon), on/off current ratio (Jon/Joff), and on-voltage Von designability based on TCAD simulations by modifying doping and p-layer thickness. High current density of 3MA/cm2 is demonstrated for a Jon/Joff ratio of 104 with a Von of 4V. Based on these simulations, we show the excellent designability of the selector in terms of Von (0-10V and beyond) and Jon (> few MA/cm2 at high Jon/Joff of 104). The main engineering controls are length and doping of p and n+ regions.
Keywords :
bipolar memory circuits; current density; elemental semiconductors; random-access storage; semiconductor diodes; semiconductor doping; semiconductor epitaxial layers; silicon; technology CAD (electronics); Si; TCAD simulations; epitaxial Si punch-through diode based selector; high density bipolar RRAM; n+/p/n+ doping structure; on-current density; on-voltage designability; on/off current ratio; p-Iayer thickness; symmetric IV characteristic; voltage 0 V to 10 V; Doping; Gallium nitride; Random access memory; Semiconductor process modeling; Switches; Thermal resistance; Bipolar RRAM; Selector; punchthrough;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636237
