Resonant tunneling diode impedance dependence analysis

Author

Alkeev, N.V. ; Velling, P. ; Khorenko, E. ; Prost, W. ; Tegude, F.J.

Author_Institution

Inst. of Radioengineering & Electron., Russian Acad. of Sci., Moscow, Russia

Volume

2

fYear

2004

Firstpage

566

Abstract

The impedance dependence of resonant tunneling diode (RTD) based on InGaAs/InAlAs heterostructure was measured in 0.1...50 GHz frequency range. It is shown, that the simplest equivalent circuit, consisting of parallel resistor and capacitance and connected to them in series resistor, describes the experimental behavior rather well. The RTD equivalent circuit parameters dependences on applied bias were obtained and standard deviations of these parameters were evaluated with methods of mathematical statistics.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; indium compounds; method of moments; microwave diodes; resonant tunnelling diodes; semiconductor device models; 0.1 to 50 GHz; InGaAs-InAlAs; double-barrier heterostructures; equivalent circuit; impedance dependence; moment method; nonlinear regression method; parallel resistor-capacitance; resonant tunneling diode; series resistor; Capacitance; Diodes; Equivalent circuits; Frequency measurement; Impedance measurement; Indium compounds; Indium gallium arsenide; Resistors; Resonant tunneling devices; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on

Print_ISBN

0-7803-8411-3

Type

conf

DOI

10.1109/MSMW.2004.1346013

Filename

1346013