Title :
Equilibrium to non-equilibrium carrier statistics for a nanolayer
Author :
Gupta, Chaitali ; Arora, Vijay K.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur (IITK), Kanpur, India
Abstract :
Fermi-Dirac carrier statistics for randomly oriented velocity moments is shown to transform to highly anisotropic non-equilibrium statistics yielding carrier velocity saturation comparable to 2-dimensional (2D) intrinsic velocity. The onset of quantum emission by a boson limits the saturation velocity. The ballistic nature of carriers injected from contacts in scaled-down channels is shown to degrade the mobility in agreement with experimental observations. Saturation velocity is shown to be independent of scattering parameters that control mobility.
Keywords :
S-parameters; ballistic transport; boson systems; carrier mobility; fermion systems; inhomogeneous media; nanostructured materials; quantum statistical mechanics; 2-dimensional intrinsic velocity; Fermi-Dirac carrier statistics; ballistic nature; boson limits; carrier velocity saturation; control mobility; equilibrium-nonequilibrium carrier statistics; highly anisotropic nonequilibrium statistics; injected carriers; mobility; nanolayer; quantum emission; randomly oriented velocity moments; scaled-down channels; scattering parameters; Nanoscale devices; Phonons; Photonics; ballistic transport; high-field transport; quantum emission; saturation velocity;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636240