Title :
Fabrication and characterization of the ZnO-based Memristor
Author :
Kumar, Ajit ; Rawal, Yaksh ; Baghini, Maryam Shojaei
Author_Institution :
Dept. of Electron. Sci., Kurukshetra Univ., Kurukshetra, India
Abstract :
This paper presents the fabrication and characterization of ZnO-based Memristor devices with Platinum (Pt) electrodes. Properties of ZnO/ZnOx strongly depends upon the sputtering conditions and heat treatment (annealing) done by rapid thermal process (RTP). Annealing creates the vacancies which provide hysteresis or in other words memory in I-V characteristics of the device. Experimental results show high current density 0.015μA/μm2 and Roff/Ron ratio of 2.5 is achieved with Pt electrode. This paper also presents C-V behaviour of the fabricated Memristor without annealing and with annealing. Maximum value of the capacitance is 5.7×10-8 F/cm2 obtained at 0V without annealing. With annealed Memristor, the maximum capacitance 2.3×10-7 F/cm2 is obtain at 0V.
Keywords :
II-VI semiconductors; capacitance; current density; electrodes; memristors; platinum; rapid thermal annealing; sputter deposition; wide band gap semiconductors; zinc compounds; C-V behaviour; I-V characteristics; Pt-ZnO; ZnO-based memristor; annealing; capacitance; current density; heat treatment; hysteresis; platinum electrodes; rapid thermal process; sputtering conditions; vacancies; voltage 0 V; Annealing; Capacitance; Memristors; Silicon; Thickness measurement; Zinc oxide; Memristor; RF-Sputtering; ZnO; annealing;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636244
