DocumentCode
1624114
Title
Fabrication and characterization of poly-3-hexylthiophene based organic thin film transistor
Author
Tiwari, Sunita ; Balasubramanian, S.K. ; Tiwari, Sunita ; Prakash, R.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fYear
2012
Firstpage
1
Lastpage
3
Abstract
An organic thin film transistor (OTFT) based on chemically synthesized poly-3-hexylthiophene (P3HT) is successfully fabricated and I-V characteristics of the device is measured at room temperature. The key performance parameters such as ON/OFF ratio, threshold voltage, carrier mobility, conductivity and transconductance are extracted through the I-V characteristics of OTFT and discussed in the paper.
Keywords
carrier mobility; conducting polymers; electrical conductivity; organic semiconductors; thin film transistors; I-V characteristics; OTFT; P3HT; carrier mobility; conductivity; on/off ratio; poly-3-hexylthiophene based organic thin film transistor; temperature 293 K to 298 K; threshold voltage; transconductance; Logic gates; Materials; Organic thin film transistors; Performance evaluation; Temperature measurement; Threshold voltage; Conducting polymers; Organic thin film transistors; Performance parameters; Poly-3-hexylthiophene;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location
Mumbai
Print_ISBN
978-1-4673-3135-7
Type
conf
DOI
10.1109/ICEmElec.2012.6636245
Filename
6636245
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