Title :
Measurement of lateral diffusion profiles for submicrometer MOSFETs
Author :
Kubota, Katsuhiko ; Kawashima, Yasuhiko ; Yoshida, Shoji ; Ishida, Motoko
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion
Keywords :
capacitance measurement; diffusion in solids; doping profiles; impurity distribution; insulated gate field effect transistors; semiconductor device testing; MOSFETs; gate-to-substrate capacitance; lateral diffusion profiles; submicron devices; Atomic measurements; Capacitance; Electrodes; Hot carriers; Impurities; MOS capacitors; MOSFETs; Microcomputers; Very large scale integration; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161734
