DocumentCode
162425
Title
Table of contents
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
1
Lastpage
10
Abstract
The following topics are dealt with: topic 1 Megawatt Scale Wind Energy Inverter; topic 2 Voltage Source Converter; topic 3 Packaging SiC Power Semiconductors; topic 4 Wide-Band-Gap Technologies; topic 4 GaN HFETs; topic 5 GaN Power Devices; topic 6 GaN-on-Si-Based Conversion Switches; topic 7 AlGaN/GaN HEMTs on Sapphire, Si, and SiC Substrates under Proton Irradiation; topic 8 High-Density Power Electronics Applications; topic 9 SiC Power Modules; topic 10 Power Electronics Building Block (PEBB) and topic 11 Solid State Transformer.
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; invertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; HFET; PEBB; Si-based conversion switches; SiC; WiPDA; high-density power electronics applications; power electronics building block; power semiconductors; proton irradiation; solid state transformer; voltage source converter; wide bandgap power devices and applications; wide-band-gap technologies; wind energy inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location
Knoxville, TN
Type
conf
DOI
10.1109/WiPDA.2014.6964605
Filename
6964605
Link To Document