Title :
4500 volt Si/SiC hybrid module qualification for modern megawatt scale wind energy inverters
Author :
Erdman, William L. ; Grider, David ; VanBrunt, Edward
Author_Institution :
Cinch LLC, Moraga, CA, USA
Abstract :
This paper discusses recent trends in wind turbine electrical architecture resulting from utility interconnect and public siting requirements. These trends together with constant need to reduce the cost-of-energy place a premium on wind turbine inverter efficiency. This need is addressed by the use of a medium voltage, three-level inverter with 4HN structure silicon carbide barrier diode located in the clamping diode location. A comparison with a conventional silicon PIN clamping diode is covered in detail.
Keywords :
elemental semiconductors; invertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; wind power plants; wind turbines; 4HN structure silicon carbide barrier diode; Si-SiC; clamping diode location; cost-of-energy reduction; hybrid module qualification; medium voltage three-level inverter; modern megawatt scale wind energy inverters; public siting requirements; silicon PIN clamping diode; utility interconnect; voltage 4500 V; wind turbine electrical architecture; wind turbine inverter efficiency; Clamps; Inverters; Poles and towers; Silicon; Silicon carbide; Wind turbines; SiC; Wind turbine; barrier diode; medium voltage; silicon carbide; three-level inverter; wind energy;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
DOI :
10.1109/WiPDA.2014.6964613
