Title :
Advances in reliability and operation space of high-voltage GaN power devices on Si substrates
Author :
Wu, Y.-F. ; Guerrero, Juan ; McKay, Judith ; Smith, K.
Author_Institution :
Transphorm Inc., Goleta, CA, USA
Abstract :
GaN-on-Si power devices have advantages in both performance and the potential for low cost and high volume production. Advances have been made in extended reliability tests exhibiting an intrinsic life time >106 hours for qualified 600-V GaN HEMT products. Experimental kV-class devices have shown CW operation at 800V with >99% efficiency at 100 kHz and a 2:1boost ratio. Both are exciting developments reaffirming the validity of the new power semiconductor technology.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; semiconductor device reliability; wide band gap semiconductors; GaN-Si; Si; frequency 100 kHz; high-voltage GaN power devices; kV-class devices; power semiconductor technology; reliability; silicon substrates; voltage 600 V; voltage 800 V; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Silicon; Silicon carbide; Switches;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
DOI :
10.1109/WiPDA.2014.6964618
