Title :
Optimization of oxygen flow rate for e-beam evaporated HfO2 thin films
Author :
Ganapathi, K.L. ; Bhat, Nagaraj ; Mohan, Swati
Author_Institution :
Centre for Nano Sci. & Eng., Indian Inst. of Sci. (IISc), Bangalore, India
Abstract :
In this study, we have employed e-beam evaporation technique to evaluate the effect of O2 flow rate during evaporation on HfO2 films grown on Silicon substrates. We report the influence of oxygen flow rate on 32-40nm HfO2 films, by characterizing the chemical and electrical properties. It has been demonstrated that the films deposited at 3 SCCM O2 flow rate show better compositional and electrical properties. The effect of post deposition annealing (PDA) and post metallization annealing (PMA) in forming gas ambient (FGA) has been analyzed on the electrical properties of the films. After annealing the leakage decreases drastically, with a slight deterioration in dielectric constant. O2 flow rate of 3 to 5 SCCM has been found to be the optimum condition.
Keywords :
annealing; electron beam deposition; high-k dielectric thin films; leakage currents; metallisation; permittivity; vacuum deposition; E-beam evaporated thin films; HfO2; chemical properties; dielectric constant; electrical properties; forming gas ambient; oxygen flow rate optimization; post deposition annealing; post metallization annealing; silicon substrates; size 32 nm to 40 nm; Adaptive optics; Annealing; Logic gates; Mechanical factors; Optical films; Temperature; EOT; HfO2; O2 flow rate; XPS; dielectric constant; e-beam evaporation; leakage current density etc;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636257
