DocumentCode :
162443
Title :
Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN
Author :
Greenlee, Jordan D. ; Feigelson, Boris N. ; Anderson, Travis J. ; Tadjer, Marko J. ; Hite, Jennifer K. ; Eddy, Charles R. ; Hobart, Karl D. ; Kub, Francis J.
Author_Institution :
Nat. Res. Council, Washington, DC, USA
fYear :
2014
fDate :
13-15 Oct. 2014
Firstpage :
59
Lastpage :
62
Abstract :
To understand the capabilities and limitations of the multicycle rapid thermal annealing (MRTA) process, the key features of the process must be systematically explored. This work is dedicated to a study of the first step in the MRTA process - conventional annealing. A fundamental study was performed to determine the optimal conventional annealing temperature for the MRTA process by monitoring crystal quality and surface morphology. It was determined that both surface damage and crystal quality recovery must be considered when optimizing the MRTA process. Furthermore, the effect of performing the MRTA process with and without a preliminary conventional annealing step was investigated. It was determined that the conventional annealing step is a crucial part of the MRTA process.
Keywords :
III-V semiconductors; crystal morphology; gallium compounds; ion implantation; magnesium; rapid thermal annealing; surface morphology; wide band gap semiconductors; GaN:Mg; MRTA; Mg-implanted GaN; conventional annealing; crystal quality monitoring; crystal quality recovery; multicycle rapid thermal annealing; optimal conventional annealing temperature; process optimization; surface damage; surface morphology; Annealing; Gallium nitride; Morphology; Rough surfaces; Surface morphology; Surface roughness; Surface treatment; GaN; Implantation; p-type GaN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
Type :
conf
DOI :
10.1109/WiPDA.2014.6964624
Filename :
6964624
Link To Document :
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