DocumentCode
162443
Title
Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN
Author
Greenlee, Jordan D. ; Feigelson, Boris N. ; Anderson, Travis J. ; Tadjer, Marko J. ; Hite, Jennifer K. ; Eddy, Charles R. ; Hobart, Karl D. ; Kub, Francis J.
Author_Institution
Nat. Res. Council, Washington, DC, USA
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
59
Lastpage
62
Abstract
To understand the capabilities and limitations of the multicycle rapid thermal annealing (MRTA) process, the key features of the process must be systematically explored. This work is dedicated to a study of the first step in the MRTA process - conventional annealing. A fundamental study was performed to determine the optimal conventional annealing temperature for the MRTA process by monitoring crystal quality and surface morphology. It was determined that both surface damage and crystal quality recovery must be considered when optimizing the MRTA process. Furthermore, the effect of performing the MRTA process with and without a preliminary conventional annealing step was investigated. It was determined that the conventional annealing step is a crucial part of the MRTA process.
Keywords
III-V semiconductors; crystal morphology; gallium compounds; ion implantation; magnesium; rapid thermal annealing; surface morphology; wide band gap semiconductors; GaN:Mg; MRTA; Mg-implanted GaN; conventional annealing; crystal quality monitoring; crystal quality recovery; multicycle rapid thermal annealing; optimal conventional annealing temperature; process optimization; surface damage; surface morphology; Annealing; Gallium nitride; Morphology; Rough surfaces; Surface morphology; Surface roughness; Surface treatment; GaN; Implantation; p-type GaN;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location
Knoxville, TN
Type
conf
DOI
10.1109/WiPDA.2014.6964624
Filename
6964624
Link To Document