DocumentCode :
1624456
Title :
The effect of silicon avalanche diodes on fuse behaviour in LV power networks
Author :
Beutel, A.A. ; Van Coller, J.M.
Author_Institution :
Sch. of Electr. & Inf. Eng., Univ. of the Witwatersrand, South Africa
Volume :
4
fYear :
2001
Firstpage :
2119
Abstract :
The effect of silicon avalanche diodes (SADs) on the behaviour of fuses in low voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium voltage fuses was adapted for LV fuses operating in the presence of SADs. A SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived.
Keywords :
avalanche diodes; electric fuses; elemental semiconductors; power distribution protection; silicon; 230 V; 50 Hz; LV fuses; LV power networks; SAD energy dissipation; SAD energy rating; Si; energy dissipation; fault closing angle; fault level; fuse behaviour; laboratory measurement; medium voltage fuses; silicon avalanche diodes; Diodes; Energy dissipation; Fault currents; Fuses; Intelligent networks; Laboratories; Low voltage; Medium voltage; Silicon; Surges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-7114-3
Type :
conf
DOI :
10.1109/IAS.2001.955920
Filename :
955920
Link To Document :
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