Investigation of driver circuits for GaN HEMTs in leaded packages

Author

Zhan Wang ; Honea, Jim ; Yuxiang Shi ; Hui Li

Author_Institution

Power Electron. Circuit Group, Transphorm Inc., Goleta, CA, USA

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

81

Lastpage

87

Abstract

GaN devices have superior performance over Si-based devices, but even a very small parasitic inductance makes GaN HEMT hard to drive. Many advanced leadless packages are proposed for lower parasitic inductance to fully realize advantages of GaN devices. However, leaded packages are still dominant in industrial applications because of their simplicity for PCB assembly and capability for a wide variety of heat-sinking techniques. In this paper, the performance of a basic half bridge power circuit based on GaN HEMTs with TO package (TO-220) is analyzed, and GaN device driver design is also discussed. Simulation and experimental results are provided for validation.

Keywords

III-V semiconductors; bridge circuits; driver circuits; gallium compounds; power HEMT; semiconductor device models; semiconductor device packaging; wide band gap semiconductors; GaN; GaN HEMTs; TO-220 package; basic half bridge power circuit; driver circuits; leaded packages; Ferrites; Gallium nitride; HEMTs; Logic gates; MODFETs; Switches; Switching circuits; GaN HEMT; driver; ferrite bead; leaded package;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/WiPDA.2014.6964629

Filename

6964629