Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

Author

Hull, B. ; Allen, S. ; Zhang, Qi ; Gajewski, D. ; Pala, Vipindas ; Richmond, Jim ; Ryu, Sang-Burm ; O´Loughlin, M. ; Van Brunt, E. ; Cheng, Lin ; Burk, A. ; Casady, J. ; Grider, David ; Palmour, J.

Author_Institution

Cree Inc., Durham, NC, USA

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

139

Lastpage

142

Abstract

In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, and a wide range of blocking voltages, from 900 V to 15 kV, has also been demonstrated.

Keywords

power MOSFET; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; SiC power MOSFETs; accelerated stressing tests; body diode; next-generation SiC MOSFETs; reliability; threshold voltage stability; time 1000 hour; voltage 900 V to 15 kV; Logic gates; MOSFET; Next generation networking; Silicon carbide; Stress; Switches; Threshold voltage; body diode; power MOSFETs; stability; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/WiPDA.2014.6964641

Filename

6964641