6.5 kV SiC normally-off JFETs — Technology status

Author

Hostetler, J.L. ; Alexandrov, P. ; Li, Xin ; Fursin, L. ; Bhalla, Anup

Author_Institution

United Silicon Carbide Inc., Deer Park, NJ, USA

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

143

Lastpage

146

Abstract

Large area 6.5 kV normally-off JFETs and JBS diodes have been developed for high DC-link voltage applications. The basic performance characteristics are examined along with the switching behavior using double pulse testing at 3 kV, 11A with an inductive load. In addition, a performance comparison between the single 6.5 kV JFET and a 6.0 kV super-cascode approach, built from stacking five normally-on 1.2 kV JFETs, is presented. The technology readiness level of each approach is discussed.

Keywords

junction gate field effect transistors; power semiconductor diodes; power semiconductor switches; semiconductor device testing; silicon compounds; wide band gap semiconductors; JBS diodes; SiC; current 11 A; double pulse testing; high DC-link voltage applications; normally-off JFETs; super-cascode approach; switching behavior; voltage 3 kV; voltage 6.0 kV; voltage 6.5 kV; JFETs; Logic gates; Performance evaluation; Reliability; Silicon; Silicon carbide; Switches; JBS Diodes; JFETs; Silicon Carbide; high DC-link voltage; super-cascode;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/WiPDA.2014.6964642

Filename

6964642