DocumentCode
1624611
Title
Temperature dependent model for Dielectric Pocket Double Gate (DPDG) MOSFET: A novel device architecture
Author
Kumari, Vandana ; Gupta, Madhu ; Saxena, Manoj ; Gupta, R.S.
Author_Institution
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
fYear
2012
Firstpage
1
Lastpage
4
Abstract
In the present work, a temperature-dependent analytical model for Dielectric Pocket Double Gate (DPDG) MOSFET is presented. The accuracy of the analytical results is verified by comparing it with the results of ATLAS 3D device simulator over wide range of operating temperatures i.e. 300K-500K. On the basis of the simulation results of different devices i.e. DP-DG, Double Gate (DG), and Dielectric Pocket (DP) MOSFET, DPDG emerges as the most suitable device architecture for analog applications at high temperatures.
Keywords
MOSFET; semiconductor device models; ATLAS 3D device simulator; DPDG MOSFET; analog applications; device architecture; dielectric pocket double gate MOSFET; temperature 300 K to 500 K; temperature-dependent analytical model; Logic gates; MOSFET; Analytical model; Dielectric Pocket; Double Gate; N-MOS inverter; Robustness against high temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location
Mumbai
Print_ISBN
978-1-4673-3135-7
Type
conf
DOI
10.1109/ICEmElec.2012.6636264
Filename
6636264
Link To Document