Title :
Temperature dependent model for Dielectric Pocket Double Gate (DPDG) MOSFET: A novel device architecture
Author :
Kumari, Vandana ; Gupta, Madhu ; Saxena, Manoj ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In the present work, a temperature-dependent analytical model for Dielectric Pocket Double Gate (DPDG) MOSFET is presented. The accuracy of the analytical results is verified by comparing it with the results of ATLAS 3D device simulator over wide range of operating temperatures i.e. 300K-500K. On the basis of the simulation results of different devices i.e. DP-DG, Double Gate (DG), and Dielectric Pocket (DP) MOSFET, DPDG emerges as the most suitable device architecture for analog applications at high temperatures.
Keywords :
MOSFET; semiconductor device models; ATLAS 3D device simulator; DPDG MOSFET; analog applications; device architecture; dielectric pocket double gate MOSFET; temperature 300 K to 500 K; temperature-dependent analytical model; Logic gates; MOSFET; Analytical model; Dielectric Pocket; Double Gate; N-MOS inverter; Robustness against high temperature;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636264
