DocumentCode :
162464
Title :
A 12 to 1 V five phase interleaving GaN POL converter for high current low voltage applications
Author :
Rhea, Benjamin K. ; Jenkins, Luke L. ; Abell, William E. ; Werner, Frank T. ; Wilson, Christopher G. ; Dean, Robert N. ; Harris, Daniel K.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear :
2014
fDate :
13-15 Oct. 2014
Firstpage :
155
Lastpage :
158
Abstract :
As applications like high performance cloud computing grow exponentially, there is an immediate need for high efficiency high current point of load (POL) converters. Interleaving phases is a common technique to reduce conduction loss, lower output ripple, improve high load performance, and reduce stress on power switching devices. However, multiphase POLs are primarily limited by size. The development of Gallium Nitride (GaN) power semiconductors is enabling higher power density in power supply applications. This paper demonstrates this with a 120 W five-phase interleaving GaN synchronous buck converter that achieves a peak efficiency above 96% and maintains over 90% efficiency up to 105 A.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; switching convertors; wide band gap semiconductors; GaN; conduction loss reduction; five phase interleaving POL converter; five-phase interleaving synchronous buck converter; gallium nitride power semiconductors; high current low voltage applications; high efficiency high current point of load converters; high performance cloud computing; power 120 W; power density; power supply applications; power switching devices; stress reduction; voltage 12 V to 1 V; Cooling; Gallium nitride; Heating; Performance evaluation; Pulse width modulation; Switches; Switching frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
Type :
conf
DOI :
10.1109/WiPDA.2014.6964645
Filename :
6964645
Link To Document :
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