Title :
High-frequency wireless charging system study based on normally-off GaN HEMTs
Author :
Yongsheng Fu ; Lei Shi ; Bai, Kevin Hua
Author_Institution :
Dept. of Electr. & Eng., Kettering Univ., Flint, MI, USA
Abstract :
The Gallium nitride high electron mobility transistor (GaN HEMT) has become popular in the power electronics industry as it offers the possibility to reach lower switching loss and higher switching frequency compared to Si devices. This paper adopts a normally-off GaN HEMT in the wireless power transfer (WPT) system to charge a 48V battery pack on the E scooter. 178W power was delivered to the battery pack with 813 kHz switching. A simulation model of GaN HEMT is also built in LTspice to itemize the system loss. At the end some thoughts of improving the system efficiency were proposed.
Keywords :
battery powered vehicles; gallium compounds; high electron mobility transistors; inductive power transmission; motorcycles; secondary cells; E scooter; GaN; LTspice; WPT system; battery pack; electric scooter; frequency 813 kHz; gallium nitride high electron mobility transistor; high-frequency wireless charging system; normally-off HEMT; power 178 W; power electronics industry; switching frequency; switching loss; voltage 48 V; wireless power transfer; Coils; Couplings; Gallium nitride; HEMTs; Inductance; MODFETs; Switching loss; CoolMOS wireless power transfer; GaN HEMT; SiC; zero voltage switching;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
DOI :
10.1109/WiPDA.2014.6964646
