DocumentCode
1624721
Title
Flip-chip bonded Si Schottky diode sampling circuits for high speed demultiplexers
Author
Jung Han Choi ; Weiske, C.-J. ; Olbrich, G.R. ; Russer, P.
Author_Institution
Munich Univ. of Technol., Germany
Volume
3
fYear
2003
Firstpage
1515
Abstract
This paper presents a Si Schottky diode sampling circuit for demultiplexer using flip-chip technology on alumina substrate (Al/sub 2/O/sub 3/). In order to design circuits, very high speed Si Schottky diodes, having cutoff frequency of 750 GHz, were modeled using the Root diode model and flip-chip interconnection was simulated using 3 dimensional electromagnetic simulator, HFSS.
Keywords
Schottky diodes; demultiplexing equipment; elemental semiconductors; flip-chip devices; signal processing equipment; silicon; 750 GHz; Al/sub 2/O/sub 3/; HFSS; Root diode model; Si; Si Schottky diode sampling circuit; alumina substrate; flip-chip bonding; high-speed demultiplexer; three-dimensional electromagnetic simulation; Bonding; Circuit simulation; Coplanar waveguides; Cutoff frequency; Electromagnetic modeling; HEMTs; Integrated circuit interconnections; Logic circuits; Sampling methods; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210424
Filename
1210424
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