Title :
Zero-bias-voltage modulation of narrow-beam-divergence tapered-thickness waveguide lasers with semi-insulating blocking layer
Author :
Yamamoto, Tsuyoshi ; Kobayashi, Hideo ; Ishikawa, Tsutomu ; Takeuchi, Tatsuya ; Watanabe, Takayuki ; Fujii, Takuya ; Ogita, Shouichi ; Kobayashi, Masato
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We demonstrated zero-bias-voltage modulation of narrow-beam-divergence laser diodes by the reduction of the parasitic capacitance using semi-insulating blocking layer. A laser with low threshold current of 10.5 mA enabled 622 Mbit/s modulation under zero-bias-voltage condition even at 85°C
Keywords :
optical communication equipment; optical modulation; quantum well lasers; waveguide lasers; 10.5 mA; 622 Mbit/s; 85 C; BH MQW lasers; low threshold current; narrow-beam-divergence laser diodes; parasitic capacitance reduction; penalty-free transmission; selective area growth; semi-insulating blocking layer; small turn-on jitter; tapered-thickness waveguide lasers; zero-bias-voltage modulation; Delay; Diode lasers; Fiber lasers; Laboratories; Laser beams; Optical waveguides; Parasitic capacitance; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719855
