Title :
Extraction of graphene/TiN work function using metal oxide semiconductor (MOS) test structure
Author :
Misra, Abhishek ; Khare, Manish ; Kottantharayil, Anil ; Kalita, Hemen ; Aslam, Mudassar
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
Workfunction of graphene/TiN stack is estimated using a metal oxide semiconductor (MOS) test structure. A thickness series in SiO2 is used to exclude the contribution of fixed oxide charges and interface states to the flat band voltage. Workfunction of thick multilayer graphene sheets (~ 7nm) is obtained as 5.04 eV. Incorporation of graphene in the gate stack of MOS structure is seen to result in negligible contribution of charges to flatband voltage. This implies that flatband shift can be used for estimating the work function with reasonable accuracy, especially if SiO2 in the thickness range of 3-4 nm is used.
Keywords :
MOS capacitors; graphene; titanium compounds; work function; C-TiN; fixed oxide charges; flat band voltage; graphene/TiN work function extraction; interface states; metal oxide semiconductor test structure; size 3 nm to 4 nm; thick multilayer graphene sheets; Dielectrics; Electrodes; Graphene; Logic gates; Nonhomogeneous media; Tin; Capacitance-Voltage; Fixed oxide charges; Graphene; Metal Oxide Semiconductor; Work function;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636272
