Flip Chip design of dual band/tri mode SiGe BiCMOS transmitter IC for CDMA wireless applications

Author

Megahed, M. ; Van Gieson, F. ; Reddy, M. ; Yates, D.

Author_Institution

Skyworks Solution Inc., Newport Beach, CA, USA

Volume

3

fYear

2003

Firstpage

1547

Abstract

Flip Chip circuit design for highly integrated transmitter IC for CDMA handset is presented. The RF flip chip implementation uses peripheral I/O bumps pattern and internal ground bumps within the die, directly on the top metal layer. The IC transmitter is designed to deliver 8 dBm in CDMA mode in cellular band, 11 dBm in AMPS mode and 9 dBm in CDMA mode in PCS band at 90, 88, 108 mA, respectively. Results show that flip chip implementation meets or exceeds the wirebond RFIC performance.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; code division multiple access; flip-chip devices; mobile handsets; radio transmitters; radiofrequency integrated circuits; semiconductor materials; 108 mA; 88 mA; 90 mA; AMPS mode; CDMA mode; PCS band; RF flip-chip design; SiGe; cellular band; dual-band tri-mode SiGe BiCMOS transmitter IC; wireless handset; Application specific integrated circuits; BiCMOS integrated circuits; Circuit synthesis; Dual band; Flip chip; Germanium silicon alloys; Multiaccess communication; Silicon germanium; Telephone sets; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210431

Filename

1210431