Development of IEEE802.11a WLAN LNA in silicon-based processes

Author

Banerjee, Bhaskar ; Matinpour, Babak ; Lee, Chang-Ho ; Venkataraman, Sunitha ; Chakraborty, Sudipto ; Laskar, Joy

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

fYear

2003

Firstpage

1573

Abstract

We describe the effects of substrate parasitics in silicon-based processes and present a methodology for designing low-noise amplifiers (LNAs) in silicon processes. Our techniques resulted in excellent agreement between simulations and measurements for a test case LNA design for 802.11a. This LNA, which covers 5-6 GHz and has gain switching is designed in a 0.8 μm SiGe bipolar technology with f/sub T/ of 50 GHz. The LNA exhibits a gain of more than 24 dB in the 5-6 GHz band with a noise figure (NF) less than 2.5 dB. The agreement between simulation and measured data is demonstrated.

Keywords

Ge-Si alloys; IEEE standards; MMIC amplifiers; bipolar MMIC; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; semiconductor materials; wireless LAN; 0.8 micron; 2.5 dB; 24 dB; 5 to 6 GHz; 50 GHz; IEEE802.11a WLAN LNA; LNA gain switching; RF front-end circuits; SiGe; SiGe bipolar technology; amplifier noise figures; microwave low-noise amplifiers; silicon-based process substrate parasitic effects; Capacitors; Coupling circuits; Design methodology; Dielectric substrates; Feedback; Germanium silicon alloys; Low-noise amplifiers; Radio frequency; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210437

Filename

1210437