• DocumentCode
    1625149
  • Title

    A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs

  • Author

    Tessmann, A. ; Leuther, A. ; Schwoerer, C. ; Massler, H. ; Kudszus, S. ; Reinert, W. ; Schlechtweg, M.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • Volume
    3
  • fYear
    2003
  • Firstpage
    1581
  • Abstract
    A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.
  • Keywords
    HEMT integrated circuits; circuit stability; coplanar transmission lines; feedback amplifiers; field effect MIMIC; integrated circuit design; integrated circuit measurement; integrated circuit modelling; millimetre wave amplifiers; 0.07 micron; 1 mm; 11 dB; 12 dB; 2 micron; 22 dB; 23 dB; 290 GHz; 30 micron; 80 to 100 GHz; 94 GHz; InAlAs-InGaAs; MHEMT; MIMIC; MSG; amplifier circuit stability; cascode configuration HEMT; channel indium content; chip-size; common-gate configuration resistive feedback; coplanar technology low-noise amplifier MMIC; coplanar transmission lines; depletion type metamorphic HEMT; extrinsic transconductance; maximum stable gain; metamorphic cascode HEMT; mm-wave amplifiers; noise figure; single-stage cascode LNA small-signal gain; transit frequency; Bandwidth; Frequency; HEMTs; Indium; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Transconductance; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2003 IEEE MTT-S International
  • Conference_Location
    Philadelphia, PA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7695-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2003.1210439
  • Filename
    1210439