DocumentCode
1625149
Title
A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs
Author
Tessmann, A. ; Leuther, A. ; Schwoerer, C. ; Massler, H. ; Kudszus, S. ; Reinert, W. ; Schlechtweg, M.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
3
fYear
2003
Firstpage
1581
Abstract
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.
Keywords
HEMT integrated circuits; circuit stability; coplanar transmission lines; feedback amplifiers; field effect MIMIC; integrated circuit design; integrated circuit measurement; integrated circuit modelling; millimetre wave amplifiers; 0.07 micron; 1 mm; 11 dB; 12 dB; 2 micron; 22 dB; 23 dB; 290 GHz; 30 micron; 80 to 100 GHz; 94 GHz; InAlAs-InGaAs; MHEMT; MIMIC; MSG; amplifier circuit stability; cascode configuration HEMT; channel indium content; chip-size; common-gate configuration resistive feedback; coplanar technology low-noise amplifier MMIC; coplanar transmission lines; depletion type metamorphic HEMT; extrinsic transconductance; maximum stable gain; metamorphic cascode HEMT; mm-wave amplifiers; noise figure; single-stage cascode LNA small-signal gain; transit frequency; Bandwidth; Frequency; HEMTs; Indium; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Transconductance; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210439
Filename
1210439
Link To Document