Cryogenic measurements of 183 GHz MMIC low noise amplifiers

Author

Dawson, D. ; Gaier, T. ; Raja, R. ; Nishimoto, M. ; Lai, R. ; Wells, M.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

3

fYear

2003

Firstpage

1585

Abstract

We report the packaging and first measurement of Indium Phosphide (InP) monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) operating at cryogenic temperatures above 140 GHz. The amplifiers were measured from 160 to 188 GHz at 20 K and tested for noise temperature and gain, with noise temperatures of 160 K. The packaging method and test setup are described, as well as detailed results at room and cryogenic temperatures.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenic electronics; field effect MIMIC; indium compounds; integrated circuit noise; integrated circuit packaging; integrated circuit testing; millimetre wave amplifiers; 160 to 188 GHz; 183 GHz MMIC low noise amplifiers; 20 to 295 K; InP; InP HEMT; InP MMIC LNAs; amplifier testing; cryogenic measurements; gain; noise temperature; packaging; test setup; Circuit testing; Cryogenics; Indium phosphide; Integrated circuit measurements; Integrated circuit noise; Integrated circuit packaging; Low-noise amplifiers; MMICs; Noise measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210440

Filename

1210440