Title :
High power amplifiers for mobile communication systems
Author_Institution :
Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
This paper introduces results of GaAs MESFET high power amplifier modules with low drain bias voltage for use in mobile communications systems. The design and fabrication techniques using HMIC and MMIC technologies are presented, addressing a design method of high power amplifier modules with the stringent requirements for cost, size, and performance. This paper describes three types of high power amplifier modules. UHF-band high efficiency, high power amplifier modules employing a combination of HMIC and MMIC technologies, a UHF-band high efficiency, linear amplifier module employing HMIC technologies, and a 1.9 GHz high efficiency, linear MMIC amplifier
Keywords :
III-VI semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; integrated circuit design; land mobile radio; multichip modules; power amplifiers; radio equipment; 1.9 GHz; GaAs; GaAs MESFET high power amplifier modules; HMIC; MMIC; UHF-band high efficiency; cost; design; fabrication techniques; high power amplifiers; linear MMIC amplifier; linear amplifier module; low drain bias voltage; mobile communication systems; performance; size; Circuits; FETs; High power amplifiers; Impedance matching; Impedance measurement; Low voltage; MMICs; Mobile communication; Power amplifiers; Power generation;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.497931
