Title :
Low cost RF MEMS switches using photodefinable mixed oxide dielectrics
Author :
Guoan Wang ; Barstow, S. ; Jeyakumar, A. ; Papapolymerou, J. ; Henderson, C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents the design, fabrication and testing of capacitive RF MEMS switches with a new, low processing cost dielectric layer on high-resistivity silicon substrate. The dielectric can be spun on the wafer and its parameters (dielectric constant and loss) can be controlled during fabrication to achieve the desired values. Both bridge- and cantilever-type switches were fabricated on high-/spl rho/ silicon substrate using a simple low cost four-mask process. Measured results are presented.
Keywords :
dielectric thin films; microswitches; photolithography; spin coating; Si; bridge-type switch; cantilever-type switch; capacitive RF MEMS switch; dielectric constant; dielectric loss; fabrication process; four-mask process; high-resistivity silicon substrate; photodefinable mixed oxide dielectric; spin coating; Costs; Dielectric constant; Dielectric losses; Dielectric measurements; Dielectric substrates; Fabrication; Radiofrequency microelectromechanical systems; Silicon; Switches; Testing;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210451
