Title :
Materials processing with atmospheric-pressure plasma jets
Author :
Hicks, R. ; Jeong, Joonsoo ; Babayan, S. ; Schuetze, A. ; Jaeyoung Park ; Herrmann, Harald ; Henins, I. ; Selwyn, G.
Author_Institution :
Dept. of Chem. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Summary form only given. Atmospheric-pressure plasma jets can be used for a wide range of materials processing applications, including surface cleaning and modification, selective etching, and thin-film deposition. The plasma source consists of two closely spaced electrodes through which helium and other gases flow (O/sub 2/, CF/sub 4/, etc.). A variety of electrode configurations can be used, and the source is suitable for continuous and large-area processing of materials. Another advantage of the plasma jet is that it achieves etching and deposition rates that are higher than those obtained in low-pressure plasmas. At the meeting, the plasma source will be described in detail, and results for several materials processing applications will be presented.
Keywords :
materials preparation; plasma deposition; plasma jets; sputter etching; surface cleaning; O/sub 2/; atmospheric-pressure plasma jets; closely spaced electrodes; continuous processing; deposition rates; electrode configurations; etching rates; large-area processing; low-pressure plasmas; materials processing applications; methyl tetrafluoride; plasma source; selective etching; surface cleaning; surface modification; tetrafluoromethane; thin-film deposition; Atmospheric-pressure plasmas; Electrodes; Etching; Gases; Helium; Plasma applications; Plasma materials processing; Plasma sources; Sputtering; Surface cleaning;
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
Print_ISBN :
0-7803-4792-7
DOI :
10.1109/PLASMA.1998.677642
