Large signal pulsed RF and DC load pull characterization of high voltage 10W GaAs-GaInP HBTs

Author

Gasseling, T. ; Heckmann, S. ; Barataud, D. ; Nebus, J.M. ; Villotte, J.P. ; Quere, R. ; Floriot, D. ; Auxemery, P.

Author_Institution

IRCOM, Limoges Univ., France

Volume

3

fYear

2003

Firstpage

1651

Abstract

This paper presents an on-wafer set up for the characterization of high voltage (26V) power HBTs under simultaneous large pulsed RF signal and pulsed DC test conditions. Both RF power profiles and DC current/voltage profiles are measured thanks to the use of a pulsed VNA (for RF) and a sampling scope (for DC). Typically the pulse width range is (300 ns - 300 ms) and a 10% duty cycle is applied. RF power performances and DC consumption of the transistors under test are recorded at different time positions within the pulse width This enables to investigate the effects of transient thermal aspects on RF power characteristics. S Band Measurements of 10 Watt (20 finger 2*70mm/sup 2/ GaAs-GaInP HBTs from Thales; TRT and UMS foundry) with specific gold radiator are reported in this paper.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device measurement; 10 W; 26 V; Au; DC current-voltage characteristics; GaAs-GaInP; RF power characteristics; S-band; gold radiator; high voltage GaAs-GaInP power HBT; large-signal pulsed load pull characteristics; on-wafer measurement; pulsed VNA; sampling scope; Current measurement; Performance evaluation; Power measurement; Pulse measurements; RF signals; Radio frequency; Sampling methods; Space vector pulse width modulation; Testing; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210455

Filename

1210455